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| 100V, 30A Schottky barrier diode in TO220F package FME-230A sAbsolute maximum ratings Parameter VRM IF(AV) IFSM I2 t Tj Tstg Ratings 100 30 150 112 - 40 to +150 - 40 to +150 Unit V A A A2 s C C 10ms Half-cycle sinewave Single Shot Conditions sElectrical characteristics Parameter VF IR H.IR Rth( j-c) Ratings 0.85 1.5max 150max 4.0max Unit V mA mA C/W IF =15A VR =VRM (Ta = 25C) Conditions Tj =150C, VR=VRM Junction-to-case 35 30 Forward power loss PF (W) 25 20 15 10 IF(AV) -PF Characteristic 100 Tj =150C t T VF - IF Characteristic (Typ.) 30 Average forward current IF(AV) (A) 25 TC -IF(AV) Characteristic VR =0V t /T = 1/2 t /T =1/6 20 15 10 Tj =150C 5 0 t T 0 50 100 150 t /T = 1/ 3, Sinewave D.C. t /T =1/6 t /T =1/ 3, Sinewave Forward current IF (A) 10 1 0.1 Ta=150C 125C 100C 60C 25C 0 0.4 0.8 1.2 1.6 t /T =1/2 5 0 0 5 10 15 20 25 30 Average forward current IF(AV) (A) D.C. 0.01 0.001 Forward voltage VF (V) Case temperature TC (C) 30 25 20 VR -PR Characteristic Tj =150C t T VR - IR Characteristic (Typ.) 100 10 Reverse current IR (mA) 125C 100C 1 0.1 0.01 0.001 60C Average forward current IF(AV) (A) Ta=150C 30 25 TC -IF(AV) Characteristic Sinewave 1- t /T=1/2 t T VR =100V Tj =150C Reverse power loss PR (W) 1- t /T= 5/6 20 1-t /T=1/3 15 10 5 0 1-t /T=1/6 0 50 100 150 D.C. 1- t /T= 2/3 15 1- t /T= 1/2 10 5 0 0 20 40 60 Sinewave 80 100 25C 0.0001 0 20 40 60 80 100 Reverse voltage VR (V) Reverse voltage VR (V) Case temperature TC (C) External dimensions (Unit: mm) Flammability: UL94V-0 or equivalent 3.3 4.4 4.0 10.0 4.2 2.8 C0.5 Reference data VF Distribution (IF =15A) 0.84 0.83 0.82 0.81 0.80 0.79 0.78 0.77 0.76 0.75 0 10 20 30 N (pcs) 40 50 50 45 40 35 30 25 20 15 10 5 0 10 20 30 N (pcs) 40 50 IR Distribution (VR=100V, Ta=25C) 60 58 56 54 52 50 48 46 44 42 40 IR Distribution (VR=100V, Ta=150C) 16.9 0.8 13.50.5 3.9 1.35 0.85 2.54 2.54 0.45 -0.1 +0.2 2.4 IR (mA) IR (A) VF (V) 0 10 20 30 N (pcs) 40 50 |
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